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STGW60H65DFB - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW60H65DFB
Manufacturer	STMicroelectronics ↗
File Size	685.37 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW60H65DFB-STMicroelectronics.pdf

STGW60H65DFB Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Sep 6, 2017 |