STGW80H65DFB IGBT

STMicroelectronics

Description

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 .
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STGW80H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 663.72 KB
Datasheet: STGW80H65DFB-STMicroelectronics.pdf
Description: IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature c

Applications

* Photovoltaic inverters

STGW80H65DFB Distributors

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STGW80H65DFB IGBT STMicroelectronics

STMicroelectronics STGW80H65DFB-like datasheet