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STGW80H65DFB - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW80H65DFB
Manufacturer	STMicroelectronics ↗
File Size	663.72 KB
Description	IGBT
Datasheet	STGW80H65DFB-STMicroelectronics.pdf

STGW80H65DFB Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Mar 25, 2020 |