STGW80H65DFB Datasheet (STMicroelectronics)

STGW80H65DFB, IGBT

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, the s

STGW80H65DFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A

* Tight parameter distribution

* Safe paralleling

* Positive VCE(sat) temperature c