STGW80H65DFB-4

IGBT

STMicroelectronics

STGW80H65DFB-4 Features

* VCE(sat) = 1.6 V (typ.) @ IC = 80 A

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recover

STGW80H65DFB-4 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching ev.

STGW80H65DFB-4 Datasheet (291.44 KB)