STGW80H65DFB-4 Datasheet, Igbt, STMicroelectronics

STGW80H65DFB-4 Features

• Igbt
• VCE(sat) = 1.6 V (typ.) @ IC = 80 A
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Tight

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Part number:

STGW80H65DFB-4

Manufacturer:

STMicroelectronics ↗

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291.44kb

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📄 Datasheet

Description:

Igbt. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB ser

STGW80H65DFB-4 Application

• Applications K(3)
• Photovoltaic inverters
• High frequency converters E(2) NG4K3E2C1_TAB Description This device is an IGBT

TAGS

STGW80H65DFB-4

STMicroelectronics

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