STGW80H65FB IGBT

STMicroelectronics

Description

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data .
G (1) E (3) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

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Datasheet Specifications

Part number: STGW80H65FB
Manufacturer: STMicroelectronics ↗
File Size: 1.44 MB
Datasheet: STGW80H65FB-STMicroelectronics.pdf
Description: IGBT

Features

* TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Low

Applications

* Figure 1. Internal schematic diagram C (2 or TAB)
* Photovoltaic inverters

STGW80H65FB Distributors

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STGW80H65FB IGBT STMicroelectronics

STMicroelectronics STGW80H65FB-like datasheet