STGW80V60DF Datasheet - STMicroelectronics

STGW80V60DF IGBT

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a pos.

STGW80V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 80 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode Applications

STGW80V60DF Datasheet (1.56 MB)