STH200N10WF7-2 Datasheet - STMicroelectronics

STH200N10WF7-2 N-channel Power MOSFET

This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switchin.

STH200N10WF7-2 Features

* Order code VDS STH200N10WF7-2 100 V

* Best-in-class SOA capability

* High current surge capability

* Extremely low on-resistance RDS(on) max. 4.0 mΩ ID 180 A PTOT 340 W Applications

* Hot-swap

* Electronic fuse

* Load switch

* In-rush

STH200N10WF7-2-STMicroelectronics.pdf