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STH260N6F6-2 Datasheet - ST Microelectronics

STH260N6F6-2 N-CHANNEL Power MOSFET

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. $ ' 3 !-V Table 1. Device summary Marking 260N6F6 260N6F6 .

STH260N6F6-2 Features

* Type STH260N6F6-2 STP260N6F6

* VDSS 60 V 60 V RDS(on) max < 0.002 Ω < 0.003 Ω ID 180 A 120 A 3 1 3 N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance 2 2 H2PAK-2 TO-220 1 Application

* Switching applications Figure 1. Internal

STH260N6F6-2 Datasheet (705.03 KB)

Preview of STH260N6F6-2 PDF

Datasheet Details

Part number:

STH260N6F6-2

Manufacturer:

STMicroelectronics ↗

File Size:

705.03 KB

Description:

N-channel power mosfet.

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STH260N6F6-2 N-CHANNEL Power MOSFET ST Microelectronics

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