This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIG
STH10NA50_STMicroelectronics.pdf
Datasheet Details
STH10NA50FI, STH10NA50
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N-channel power mos mosfet.
This datasheet PDF includes multiple part numbers: STH10NA50FI, STH10NA50.
Please refer to the document for exact specifications by model.
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