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STH110N7F6-2 N-CHANNEL POWER MOSFET

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Description

STH110N7F6-2 N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package Datasheet - production data .
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

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Features

* TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram ' 7$%
*  Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

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