STH110N7F6-2 Datasheet (STMicroelectronics)

STH110N7F6-2, N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

6 $0Y Order code STH110N7F6-2 Table 1.

Device summary Marking Package 110N7F6 H2PAK-2 Mar

STH110N7F6-2 Features

* TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram '7$%

* Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications