STH110N7F6-2 Datasheet, Mosfet, STMicroelectronics

STH110N7F6-2 Features

• Mosfet TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram '7$%
•  Order code VDS RDS(on)max. ID PTOT STH110N7F6-2 68 V 0.0063 Ω 110 A 176 W
• Very low on-resistance <

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STH110N7F6-2

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STMicroelectronics ↗

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📄 Datasheet

Description:

N-channel power mosfet. This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting

STH110N7F6-2 Application

• Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with

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STH110N7F6-2

STMicroelectronics

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