STH110N10F7-2 Datasheet - STMicroelectronics

STH110N10F7-2 N-CHANNEL POWER MOSFET

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing .

STH110N10F7-2 Features

* Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applications Desc

STH110N10F7-2-STMicroelectronics.pdf