STH110N10F7-2 - N-CHANNEL POWER MOSFET

STMicroelectronics

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Datasheet Details

Part number: STH110N10F7-2
Manufacturer: STMicroelectronics ↗
File Size: 694.21 KB
Datasheet: STH110N10F7-2-STMicroelectronics.pdf
Description: N-CHANNEL POWER MOSFET

STH110N10F7-2 Product details

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching..

Features

Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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N-CHANNEL POWER MOSFET STMicroelectronics

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