Datasheet Details
Part number:
STH110N10F7-2
Manufacturer:
File Size:
694.21 KB
Description:
N-CHANNEL POWER MOSFET
Features
* Order code STH110N10F7-2 STH110N10F7-6 VDS 100 V RDS(on) max. 6.5 mΩ ID PTOT 110 A 150 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications
* Switching applications Desc
STH110N10F7-2-STMicroelectronics.pdf
STH110N10F7-2, N-CHANNEL POWER MOSFET
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onresistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: Device summary Order code Marking Package Packing
STH110N10F7-2 Distributor
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