STH10N80K5-2AG Datasheet - STMicroelectronics

STH10N80K5-2AG Automotive-grade N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product st.

STH10N80K5-2AG Features

* Order code STH10N80K5-2AG VDS RDS(on) max. ID 800 V 0.68 Ω 8A

* AEC-Q101 qualified

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested G(1) S(2, 3) Applications

* Switching

STH10N80K5-2AG-STMicroelectronics.pdf