Description
G(1)
G(1)
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.S(2, 3) for
H2PAK-2
S(2, 3, 4, 5, 6, 7)
for H2PAK-6
N-CHG1DTABS23_2_6
Product status
STH240N10F7-2
STH240N10F7-6
Product summary
Order code
STH240N10F7-2
Marking
240N10F7
Package
H²PAK-2
Packing
Tape and reel
Order code
STH240
Features
- Order code
VDS
RDS(on) max. STH240N10F7-2 STH240N10F7-6
100 V
2.5 mΩ.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness
ID 180 A
D(TAB)
D(TAB).