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STH240N10F7-2 N-CHANNEL POWER MOSFET

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Description

STH240N10F7-2, STH240N10F7-6 Datasheet N-channel 100 V, 2 mΩ typ., 180 A STripFET™ F7 Power MOSFETs in an H²PAK-2 and H²PAK-6 packages TAB 23 1 H2 PA.
G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state re.

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Features

* Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity

STH240N10F7-2 Distributors

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