STH265N6F6-2AG Datasheet (STMicroelectronics)

STH265N6F6-2AG, N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

S(2, 3) H2PAK-2 Order code STH265N6F6-2AG STH265N6F6-6AG S(2, 3, 4, 5, 6, 7) H2PAK-6 SC06140_HP2AK-2-6 Table

STH265N6F6-2AG Features

* Order code STH265N6F6-2AG STH265N6F6-6AG VDS 60 V 60 V RDS(on) max 2.1 mΩ 2.1 mΩ ID 180 A 180 A

* Designed for automotive applications

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

* Switching applicat