STH80N10F7-2 Datasheet (STMicroelectronics)

STH80N10F7-2, N-CHANNEL POWER MOSFET

th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

'3$.72DQG 72)3QR7$% +3$. $0Y Order codes STD80N10F7 STF80N10F7 STH80N10F

STH80N10F7-2 Features

* Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W

* Extremely low gate charge

* Ultra low on-resistance

* Low gate input resistance Figure 1. Internal sch