STH80N10F7-2
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N-channel power mosfet. th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The re
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STH80N10F7-2 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STH80N10F7-2
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·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate input .
STH80N10LF7-2AG - N-CHANNEL POWER MOSFET
(STMicroelectronics)
STH80N10LF7-2AG
Datasheet
Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package
TAB
23 1 H2PAK-2
D(TAB)
.
STH81002Z - 1550nm Laser in Coaxial TO-Package
(Siemens)
STH81002Z
1550nm Laser in Coaxial TO-Package
• • • • • •
Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well struc.
STH8103 - Hall Effect Switch
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Omnipolar Detection Hall IC
STH8103
■DESCRIPTION
Micro Power, Ultra-Sensitive, Hall Effect Switch
■FEATURE
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STH85N15F4-2 - N-CHANNEL POWER MOSFET
(STMicroelectronics)
Features
STH85N15F4-2 STP85N15F4
N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET
Preliminary data
Type
VDSS
RDS(on) .
STH8N80 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
(ST Microelectronics)
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STH8N80FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
(ST Microelectronics)
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STH8NA60 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
(ST Microelectronics)
®
STW8NA60 STH8NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 8NA60 STH8NA60F I
V DSS 600 V 600 V
R DS(on) <1 Ω <1 Ω
ID 8.
STH8NA60FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
(ST Microelectronics)
®
STW8NA60 STH8NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STW 8NA60 STH8NA60F I
V DSS 600 V 600 V
R DS(on) <1 Ω <1 Ω
ID 8.
STH8NA80 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
(ST Microelectronics)
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STW8NA80 STH8NA80FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE STW 8NA80 STH8NA80F I
s s s s s s s
V DSS 800 V 800 .