STH8NA80

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

ST Microelectronics

STH8NA80 General Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, H.

STH8NA80 Datasheet (45.09 KB)

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STH8NA80

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STMicroelectronics ↗

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45.09 KB

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N - channel enhancement mode power mos transistors.
® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I s s s s s s s V DSS 800 V 800 .

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STH8NA80 General Description

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