STH80N10LF7-2AG Datasheet - STMicroelectronics

STH80N10LF7-2AG N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STH80N10LF7-2AG Product summary O.

STH80N10LF7-2AG Features

* Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 80 A PTOT 110 W G(1) S(2, 3) Ap

STH80N10LF7-2AG-STMicroelectronics.pdf