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STH80N10LF7-2AG N-CHANNEL POWER MOSFET

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Description

STH80N10LF7-2AG Datasheet Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) .
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, whil.

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Features

* Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness ID 80 A PTOT 110 W G(1) S(2, 3) Ap

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