STI6N80K5 Datasheet (STMicroelectronics)

STI6N80K5, N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Order

STI6N80K5 Features

* Order codes VDS RDS(on)max ID PTOT STB6N80K5 STD6N80K5 800 V STI6N80K5 1.6 Ω 4.5 A 85 W STP6N80K5 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2, TAB)

* Industry’s lowest RDS(on)

* Industry’s best figure of merit (FoM)

* Ultra low gate charge