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STI6N90K5

N-channel Power MOSFET

STI6N90K5 Features

* Order code STI6N90K5 VDS 900 V RDS(on) max. 1.10 Ω ID 6A

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications

* Switching applications Description This very high voltage N

STI6N90K5 General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order cod.

STI6N90K5 Datasheet (581.24 KB)

Preview of STI6N90K5 PDF

Datasheet Details

Part number:

STI6N90K5

Manufacturer:

STMicroelectronics ↗

File Size:

581.24 KB

Description:

N-channel power mosfet.
STI6N90K5 N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in an I²PAK package Datasheet - production data TAB 123 I²PAK Figure 1: Internal.

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STI6N90K5 N-channel Power MOSFET STMicroelectronics

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