STK24N4LLH5 Datasheet (STMicroelectronics)

STK24N4LLH5, N-channel Power MOSFET

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

The lowest available RDS(on) *Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Dev

STK24N4LLH5 Features

* Type STK24N4LLH5

* VDSS 40 V RDS(on) max < 0.0055 Ω RDS(on)

* Qg 96 nC

* mΩ Ultra low top and bottom junction to case thermal resistance RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Fully