STK28N3LLH5

N-channel Power MOSFET

STMicroelectronics

STK28N3LLH5 Features

* Type STK28N3LLH5

* VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on)

* Qg 68.4 nC

* mΩ Ultra low top and bottom junction to case thermal resistance RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge Full

STK28N3LLH5 General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)
*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Dev.

STK28N3LLH5 Datasheet (372.54 KB)