STL110N10F7 Datasheet - STMicroelectronics

STL110N10F7 - N-Channel Power MOSFET

S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

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STL110N10F7 Features

* PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applica

STL110N10F7-STMicroelectronics.pdf