STL117N4LF7AG Datasheet - STMicroelectronics

STL117N4LF7AG Automotive-grade N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Maturity status link STL117N4LF7AG Device summary Or.

STL117N4LF7AG Features

* Order code STL117N4LF7AG VDS 40 V RDS(on) max. 3.5 mΩ

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness

* Wettable flank package ID 11

STL117N4LF7AG-STMicroelectronics.pdf