STL135N8F7AG Datasheet - STMicroelectronics

STL135N8F7AG N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL135N8F7AG Table 1: Device summary Marki.

STL135N8F7AG Features

* Order code VDS STL135N8F7AG 80 V RDS(on) max. 3.6 mΩ ID PTOT 120 A 135 W

* Designed for automotive applications and AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche rugged

STL135N8F7AG-STMicroelectronics.pdf