STL13DP10F6 Datasheet - STMicroelectronics

STL13DP10F6 Dual P-CHANNEL POWER MOSFET

This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STL13DP10F6 Table 1. Device summary Marking Packages 13DP10F6 Power.

STL13DP10F6 Features

* 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate dr

STL13DP10F6-STMicroelectronics.pdf