STL13DP10F6 - Dual P-CHANNEL POWER MOSFET
This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Order code STL13DP10F6 Table 1.
Device summary Marking Packages 13DP10F6 Power
STL13DP10F6 Features
* 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate dr
