STL13DP10F6 Datasheet - STMicroelectronics

Dual P-CHANNEL POWER MOSFET

STL13DP10F6 Features

* 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1. Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max. ID 0.18 Ω 3.3 A

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate dr

STL13DP10F6 General Description

This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STL13DP10F6 Table 1. Device summary Marking Packages 13DP10F6 Power.

STL13DP10F6 Datasheet (551.30 KB)

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STL13DP10F6

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STMicroelectronics ↗

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551.30 KB

Description:

Dual p-channel power mosfet.
STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production da.

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STL13DP10F6 Dual P-CHANNEL POWER MOSFET STMicroelectronics

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STL13DP10F6 Features

STL13DP10F6 General Description

Datasheet Details

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