STL13NM60N - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most
STL13NM60N Features
* 3 6 6
* %RWWRPYLHZ ' 3RZHU)/$7[+9 Order code VDS @ Tjmax STL13NM60N 650 V RDS(on) max. 0.385 Ω ID 10 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Applications
* Switching applications F
