STL190N4F7AG Datasheet - STMicroelectronics

STL190N4F7AG N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL190N4F7AG Table 1: Device summary Markin.

STL190N4F7AG Features

* Order code STL190N4F7AG VDS 40 V RDS(on) max 2.00 mΩ ID 120 A

* Designed for automotive applications and AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness

* Wett

STL190N4F7AG Datasheet (850.29 KB)