STL19N3LLH6AG Datasheet (STMicroelectronics)

STL19N3LLH6AG, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STL19N3LLH6AG Product summary Order code STL19N3LLH6AG Marking 19N3LLH6 Package Pow

STL19N3LLH6AG Features

* Order code VDS STL19N3LLH6AG 30 V

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level

* Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W