STLD110N10F7 Datasheet - STMicroelectronics

STLD110N10F7 N-Channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STLD110N10F7 Product summary Orde.

STLD110N10F7 Features

* Order code VDS RDS(on) max. STLD110N10F7 100 V 6 mΩ

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness ID 107 A D(5, 6, 7, 8) Applications

* Switching applicat

STLD110N10F7-STMicroelectronics.pdf