STLD257N4F7AG Datasheet - STMicroelectronics

STLD257N4F7AG Automotive-grade N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STLD257N4F7AG Product summary Ord.

STLD257N4F7AG Features

* Order code STLD257N4F7AG VDS 40 V RDS(on) max. 1.1 mΩ ID 120 A D(5, 6, 7, 8)

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness

* Wetta

STLD257N4F7AG-STMicroelectronics.pdf