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STP100N8F6 - N-channel Power MOSFET

STP100N8F6 Description

STP100N8F6 N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schemat.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

STP100N8F6 Features

* Order code VDS STP100N8F6 80 V RDS(on)max. 0.009 Ω ID 100 A PTOT 176 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

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N-channel Power MOSFET STMicroelectronics
STMicroelectronics STP100N8F6-like datasheet