STP260N4F7 Datasheet (STMicroelectronics)

STP260N4F7, N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

S(3) Order code STP260N4F7 AM01475v1_Tab Table 1: Dev

STP260N4F7 Features

* Order code STP260N4F7 VDS 40 V RDS(on)max 2.2 mΩ ID 120 A PTOT 235 W Figure 1: Internal schematic diagram D(2, TAB) G(1) Features

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applic