STT6N3LLH6 Datasheet - STMicroelectronics

STT6N3LLH6 MOSFET

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STT6N3LLH6 Table 1. Device summary Marking Package STG1 SOT23-6L Packa.

STT6N3LLH6 Features

* Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V)

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses Figure 1. Internal sc

STT6N3LLH6 Datasheet (631.31 KB)