STU13N60M2

N-channel Power MOSFET

STMicroelectronics

STU13N60M2 Features

* Order codes VDS @ TJmax RDS(on) max ID STP13N60M2 STU13N60M2 650 V 0.38 Ω 11 A STW13N60M2

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Applications

STU13N60M2 General Description

AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They .

STU13N60M2 Datasheet (713.80 KB)

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STU13N60M2

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STMicroelectronics ↗

File Size:

713.80 KB

Description:

N-channel power mosfet.
STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datashe.

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STU13N60M2 N-channel Power MOSFET STMicroelectronics

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STU13N60M2 Features

STU13N60M2 General Description

Datasheet Details

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