Datasheet Details
Part number:
STU13N60M2
Manufacturer:
File Size:
713.80 KB
Description:
N-channel Power MOSFET
Features
* Order codes VDS @ TJmax RDS(on) max ID STP13N60M2 STU13N60M2 650 V 0.38 Ω 11 A STW13N60M2
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected Applications
STU13N60M2-STMicroelectronics.pdf
STU13N60M2, N-channel Power MOSFET
AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They
STU13N60M2 Distributor
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