Datasheet Details
Part number:
STU13NB60
Manufacturer:
File Size:
91.88 KB
Description:
N-channel Power MOSFET
STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU13NB60 www.DataSheet4U.com s s s s s s V DSS 600 V R DS(on) < 0.45 Ω ID 12.6 A TYPICAL RDS(on) = 0.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V
STU13NB60_STMicroelectronics.pdf
STU13NB60, N-channel Power MOSFET
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala
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