STU13NB60 Datasheet - STMicroelectronics

N-channel Power MOSFET

STU13NB60 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

STU13NB60 Datasheet (91.88 KB)

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STU13NB60

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STMicroelectronics ↗

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N-channel power mosfet.
STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU13NB60 www.DataSheet4U.com s s s s s s V DSS 600 V R DS(on) < 0.45 Ω.

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STU13NB60 General Description

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