STU40N2LH5

N-channel Power MOSFET

STMicroelectronics

STU40N2LH5 Features

* Type STD40N2LH5 STU40N2LH5

* VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK A

STU40N2LH5 General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)
*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Dev.

STU40N2LH5 Datasheet (898.43 KB)

STU40N2LH5 Datasheet Preview — Preview of STU40N2LH5 PDF

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STU40N2LH5

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STMicroelectronics ↗

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898.43 KB

Description:

N-channel power mosfet.

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STU40N2LH5 N-channel Power MOSFET STMicroelectronics

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STU40N2LH5 Features

STU40N2LH5 General Description

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