STU6N65M2 Datasheet - STMicroelectronics

STU6N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM.

STU6N65M2 Features

* Order codes STF6N65M2 STP6N65M2 STU6N65M2 VDS RDS(on) max ID 650 V 1.35 Ω 4A

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic diagram , TAB Applications

STU6N65M2-STMicroelectronics.pdf