STU6N95K5 Datasheet - STMicroelectronics

STU6N95K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. DS6666.

STU6N95K5 Features

* Order codes VDS RDS(on) max. STD6N95K5 STP6N95K5 STU6N95K5 950 V 1.25 Ω STW6N95K5

* DPAK 950 V worldwide best RDS(on)

* Worldwide best FOM (figure of merit)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected ID 9A PTOT 90 W G(1) Applic

STU6N95K5-STMicroelectronics.pdf