STU80N4F6

N-channel Power MOSFET

STMicroelectronics

STU80N4F6 Features

* TAB IPAK 3 2 1 Figure 1. Internal schematic diagram 'Ć7$%

* Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Applications

* Switching applications Description This dev

STU80N4F6 General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STU80N4F6 Table 1. Device summary Marking Package 80N4F.

STU80N4F6 Datasheet (620.96 KB)