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STU8NM50N N-Channel MOSFET

STU8NM50N Description

isc N-Channel MOSFET Transistor STU8NM50N .

STU8NM50N Features

* Drain Current
* ID= 5A@ TC=25℃
* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max)
* 100% avalanche tested

STU8NM50N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 5 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature 150 ℃ Tst

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Datasheet Details

Part number
STU8NM50N
Manufacturer
INCHANGE
File Size
283.22 KB
Datasheet
STU8NM50N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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