STU9N60M2 Datasheet - STMicroelectronics

STU9N60M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter.

STU9N60M2 Features

* Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected PTOT 60 W Package DPAK TO-220 IPAK Applications

STU9N60M2-STMicroelectronics.pdf