STU9N65M2 Datasheet - STMicroelectronics

STU9N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding high ef.

STU9N65M2 Features

* Order codes STD9N65M2 STF9N65M2 STP9N65M2 STU9N65M2 VDS RDS(on) max ID 650 V 0.9 Ω 5A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic diagram , TAB Applications

STU9N65M2-STMicroelectronics.pdf