STU9NC80Z N-Channel MOSFET

ST Microelectronics

Description

N-CHANNEL 800V - 0.82Ω - 8.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU9NC80Z STU9NC80ZI s s s s s s STU9NC80Z STU9NC80ZI VDSS 8.
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

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Datasheet Specifications

Part number: STU9NC80Z
Manufacturer: STMicroelectronics ↗
File Size: 407.58 KB
Datasheet: STU9NC80Z_STMicroelectronics.pdf
Description: N-Channel MOSFET

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU9NC80Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source

STU9NC80Z Distributors

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STU9NC90Z STU9NC90ZI STU9N60M2 STU9N65M2 STU9NA60 STU9NB80

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STU9NC80Z N-Channel MOSFET ST Microelectronics

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