STU9NC90ZI - N-channel Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	STU9NC90ZI
Manufacturer	STMicroelectronics ↗
File Size	350.04 KB
Description	N-channel Power MOSFET
Datasheet	STU9NC90ZI_STMicroelectronics.pdf

STU9NC90ZI Product details

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU8NC9.

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Published: Nov 19, 2008 |