STU9NC80Z_STMicroelectronics.pdf
Datasheet Details
Part number:
STU9NC80ZI, STU9NC80Z
Manufacturer:
File Size:
407.58 KB
Description:
N-channel 800v - 0.82ohm.
Note:
This datasheet PDF includes multiple part numbers: STU9NC80ZI, STU9NC80Z.
Please refer to the document for exact specifications by model.
STU9NC80ZI, STU9NC80Z, N-CHANNEL 800V - 0.82ohm
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari
STU9NC80ZI Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
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