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STU9NC80ZI

N-CHANNEL 800V - 0.82ohm

STU9NC80ZI Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STU9NC80ZI General Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

STU9NC80ZI Datasheet (407.58 KB)

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Datasheet Details

Part number:

STU9NC80ZI

Manufacturer:

STMicroelectronics ↗

File Size:

407.58 KB

Description:

N-channel 800v - 0.82ohm.
N-CHANNEL 800V - 0.82Ω - 8.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU9NC80Z STU9NC80ZI s s s s s s STU9NC80Z STU9NC80ZI VDSS 8.

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STU9NC80ZI N-CHANNEL 800V 0.82ohm ST Microelectronics

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