STW13NM60N Datasheet - STMicroelectronics

STW13NM60N N-CHANNEL Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most.

STW13NM60N Features

* Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK 3 2 1 T

STW13NM60N Datasheet (541.85 KB)