STW28NK60Z

N-CHANNEL MOSFET

STMicroelectronics

STW28NK60Z Features

* TYPE STW28NK60Z s s Figure 1: Package ID 27 A PW 350 W VDSS 600 V RDS(on) < 0.185 Ω TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY TO-247 DESCR

STW28NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements .

STW28NK60Z Datasheet (250.09 KB)