STW3N170

N-Channel Power MOSFET

STMicroelectronics

STW3N170 Features

* 3 2 1 TO-247 D(2, TAB) Order code VDS RDS(on) max. STW3N170 1700 V 13 Ω

* 100% avalanche tested

* Intrinsic capacitances and Qg minimized

* High speed switching Applications

* Switching applications ID 2.6 A Description G(1) S(3) This Power MOSFET is des

STW3N170 General Description

G(1) S(3) This Power MOSFET is designed using the STMicroelectronics consolidated striplayout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. AM01475v1_noZen Product status link STW3N170 Produc.

STW3N170 Datasheet (257.42 KB)