STW30N80K5 Datasheet - STMicroelectronics

STW30N80K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order cod.

STW30N80K5 Features

* table Order code STW30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A 3 2 1 TO-247 Figure 1: Internal schematic diagram Features

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applicat

STW30N80K5-STMicroelectronics.pdf