STW45N60DM2AG

N-CHANNEL MOSFET

STMicroelectronics

STW45N60DM2AG Features

* Order code STW45N60DM2AG VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID 34 A PTOT 250 W 3 2 1 TO-247 Figure 1: Internal schematic diagram

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitan

STW45N60DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STW45N60DM2AG Datasheet (287.01 KB)